Study of the Interaction of Optical Radiation with Binary II-VI Semiconductor Materials (ZnO and AZO)

Abstract

The main objective of this research is to conduct a detailed analysis of pure zinc oxide and aluminum-doped zinc oxide samples, deposited using the magnetron sputtering technique. The focus is on identifying an alternative method for efficiently extracting the optical-electronic properties of these samples. The study involves altering the composition of zinc oxide by adjusting the oxygen concentration, leading to obtaining samples with different properties. The optoelectronic properties such as charge concentration, charge carrier mobility, optical resistance, electrical resistance, optical absorption, and bandgap energy are studied using a spectrophotometry measurement and spectroscopic ellipsometry device. Additionally, a new refractive index model, Birouk's model, is applied to test the compatibility and efficiency of the samples. Subsequently, the optimization process involves creating samples similar to those exhibiting preferred properties from the aluminum-doped zinc oxide series. Further investigation into this selected series is conducted by varying the annealing temperature factor. Using ellipsometry spectroscopy measurement device, these samples are studied to obtain a comprehensive understanding of their properties. Sample examination includes evaluating their strengths for potential applications in various industrial fields. To enhance the practical benefit of the study, experimental mathematical relationships are derived to simplify the process of extracting optical-electronic properties and to verify their accuracy. This research aims to contribute valuable insights for industrial applications and to provide a basis for future studies in this field